Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP.
This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction.
Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D.
1. Advances in Chemical Mechanical Planarization (CMP) - p. i 2. Cover - p. i 3. Title - p. ii 4. Title Page - p. iii 5. Copyright - p. iv 6. Table of Contents - p. iv 7. Contributors - p. xi 8. Preface - p. xiv 9. 1 Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP) - p. 3 10. 2 Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond - p. 29 11. 3 Electrochemical techniques and their applications for CMP of metal films - p. 51 12. 4 Ultra-low-k materials and chemical mechanical planarization (CMP) - p. 95 13. 5 CMP processing of high mobility channel materials: alternatives to Si - p. 125 14. 6 Multiscale modeling of chemical mechanical planarization (CMP) - p. 143 15. 7 Polishing of SiC films - p. 175 16. 8 Chemical and physical mechanisms of CMP of gallium nitride - p. 195 17. 9 Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes - p. 221 18. 10 Transient copper removal rate phenomena with implications for polishing mechanisms - p. 237 19. 11 Environmental aspects of planarization processes - p. 257 20. 12 Preparation and characterization of slurry for CMP - p. 323 21. 13 Chemical metrology methods for CMP quality - p. 355 22. 14 Diamond disc pad conditioning in chemical mechanical polishing - p. 383 23. 15 Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy - p. 413 24. 16 Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters - p. 451 25. 17 Approaches to defect characterization, mitigation and reduction - p. 467 26. 18 Challenges and solutions for post-CMP cleaning at device and interconnect levels - p. 503 27. 19 Applications of chemical mechanical planarization (CMP) to More than Moore devices - p. 533 28. 20 CMP for phase change materials - p. 557 29. 21 CMP pads and their performance - p. 567 30. 22 Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning - p. 591 31. Index - p. 627
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP.
This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction.
Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D.
1. Advances in Chemical Mechanical Planarization (CMP) - p. i 2. Cover - p. i 3. Title - p. ii 4. Title Page - p. iii 5. Copyright - p. iv 6. Table of Contents - p. iv 7. Contributors - p. xi 8. Preface - p. xiv 9. 1 Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP) - p. 3 10. 2 Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond - p. 29 11. 3 Electrochemical techniques and their applications for CMP of metal films - p. 51 12. 4 Ultra-low-k materials and chemical mechanical planarization (CMP) - p. 95 13. 5 CMP processing of high mobility channel materials: alternatives to Si - p. 125 14. 6 Multiscale modeling of chemical mechanical planarization (CMP) - p. 143 15. 7 Polishing of SiC films - p. 175 16. 8 Chemical and physical mechanisms of CMP of gallium nitride - p. 195 17. 9 Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes - p. 221 18. 10 Transient copper removal rate phenomena with implications for polishing mechanisms - p. 237 19. 11 Environmental aspects of planarization processes - p. 257 20. 12 Preparation and characterization of slurry for CMP - p. 323 21. 13 Chemical metrology methods for CMP quality - p. 355 22. 14 Diamond disc pad conditioning in chemical mechanical polishing - p. 383 23. 15 Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy - p. 413 24. 16 Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters - p. 451 25. 17 Approaches to defect characterization, mitigation and reduction - p. 467 26. 18 Challenges and solutions for post-CMP cleaning at device and interconnect levels - p. 503 27. 19 Applications of chemical mechanical planarization (CMP) to More than Moore devices - p. 533 28. 20 CMP for phase change materials - p. 557 29. 21 CMP pads and their performance - p. 567 30. 22 Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning - p. 591 31. Index - p. 627
