CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. ix 6. Preface - p. xi 7. Acknowledgments - p. xiii 8. 1: Basics of metal–oxide–semiconductor field-effect transistor (MOSFET) - p. xiii 9. 2: Scaling and evolution of device architecture - p. 17 10. 3: Strain engineering - p. 40 11. 4: High-κ dielectric and metal gate - p. 67 12. 5: Channel materials - p. 103 13. 6: Challenges in ultra-shallow junction technology - p. 124 14. 7: Advanced contact technology - p. 155 15. 8: Advanced interconnect technology and reliability - p. 213 16. Final words - p. 249 17. Acronyms - p. 251 18. Index - p. 255
CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. ix 6. Preface - p. xi 7. Acknowledgments - p. xiii 8. 1: Basics of metal–oxide–semiconductor field-effect transistor (MOSFET) - p. xiii 9. 2: Scaling and evolution of device architecture - p. 17 10. 3: Strain engineering - p. 40 11. 4: High-κ dielectric and metal gate - p. 67 12. 5: Channel materials - p. 103 13. 6: Challenges in ultra-shallow junction technology - p. 124 14. 7: Advanced contact technology - p. 155 15. 8: Advanced interconnect technology and reliability - p. 213 16. Final words - p. 249 17. Acronyms - p. 251 18. Index - p. 255
