Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.
Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
1. Introduction - p. 47 2. Chapter 3.1: Dopants in Atomic Layer Deposited HfO2 Thin Films - p. 48 3. Chapter 3.2: Impact of Zr Content in Atomic Layer Deposited Hf1 − xZrxO2 Thin Films - p. 74 4. Chapter 3.3: Ferroelectric Films by Physical Vapor Deposition and Ion Implantation - p. 101 5. Chapter 3.4: Dopants in Chemical Solution-Deposited HfO2 Films - p. 125 6. Chapter 3.5: Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties - p. 143 7. Chapter 4: Epitaxial Growth of Doped HfO2 Ferroelectric Materials - p. 172 8. 5: Temperature Dependent Phase Transitions in Hafnia Based Ferroelectrics - p. 192 9. Chapter 5.1: Structural Origin of Temperature-Dependent Ferroelectricity - p. 192 10. Chapter 5.2: Pyroelectric and Electrocaloric Effects and Their Applications - p. 216 11. Chapter 6: Thermodynamics of Phase Stability and Ferroelectricity From First Principles - p. 244 12. 7: Physical Characterization on a Nanometer Scale - p. 289 13. Chapter 7.1: Piezoresponse Force Microscopy (PFM) - p. 289 14. Chapter 7.2: Transmission Electron Microscopy (STEM and TEM) - p. 316 15. Chapter 8: Impact of Electrodes on the Ferroelectric Properties - p. 340 16. 9: Electrical Field Cycling Behavior - p. 364 17. Chapter 9.1: Polarization Switching in HfO2-Based Devices - p. 364 18. Chapter 9.2: Field Cycling Behavior of Ferroelectric HfO2-Based Capacitors - p. 380 19. Chapter 9.3: Modeling of Field Cycling Behavior of Ferroelectric Hafnia-Based Capacitors - p. 398 20. 10: Ferroelectric Hafnium Oxide Based Devices - p. 411 21. Chapter 10.1: Ferroelectric One Transistor/One Capacitor Memory Cell - p. 411 22. Chapter 10.2: Antiferroelectric One Transistor/One Capacitor Memory Cell - p. 424 23. Chapter 10.3: Ferroelectric Tunnel Junction - p. 435 24. Chapter 10.4: Ferroelectric Field Effect Transistor - p. 449 25. Chapter 10.5: Negative Capacitance in HfO2- and ZrO2-Based Ferroelectrics - p. 471 26. Chapter 10.6: Ferroelectric Devices for Logic in Memory - p. 493 27. Chapter 10.7: Ferroelectric Field Effect Transistor for Neuromorphic Applications - p. 513 28. Nomenclature - p. 529 29. Acronyms - p. 535 30. Index - p. 541
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.
Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
1. Introduction - p. 47 2. Chapter 3.1: Dopants in Atomic Layer Deposited HfO2 Thin Films - p. 48 3. Chapter 3.2: Impact of Zr Content in Atomic Layer Deposited Hf1 − xZrxO2 Thin Films - p. 74 4. Chapter 3.3: Ferroelectric Films by Physical Vapor Deposition and Ion Implantation - p. 101 5. Chapter 3.4: Dopants in Chemical Solution-Deposited HfO2 Films - p. 125 6. Chapter 3.5: Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties - p. 143 7. Chapter 4: Epitaxial Growth of Doped HfO2 Ferroelectric Materials - p. 172 8. 5: Temperature Dependent Phase Transitions in Hafnia Based Ferroelectrics - p. 192 9. Chapter 5.1: Structural Origin of Temperature-Dependent Ferroelectricity - p. 192 10. Chapter 5.2: Pyroelectric and Electrocaloric Effects and Their Applications - p. 216 11. Chapter 6: Thermodynamics of Phase Stability and Ferroelectricity From First Principles - p. 244 12. 7: Physical Characterization on a Nanometer Scale - p. 289 13. Chapter 7.1: Piezoresponse Force Microscopy (PFM) - p. 289 14. Chapter 7.2: Transmission Electron Microscopy (STEM and TEM) - p. 316 15. Chapter 8: Impact of Electrodes on the Ferroelectric Properties - p. 340 16. 9: Electrical Field Cycling Behavior - p. 364 17. Chapter 9.1: Polarization Switching in HfO2-Based Devices - p. 364 18. Chapter 9.2: Field Cycling Behavior of Ferroelectric HfO2-Based Capacitors - p. 380 19. Chapter 9.3: Modeling of Field Cycling Behavior of Ferroelectric Hafnia-Based Capacitors - p. 398 20. 10: Ferroelectric Hafnium Oxide Based Devices - p. 411 21. Chapter 10.1: Ferroelectric One Transistor/One Capacitor Memory Cell - p. 411 22. Chapter 10.2: Antiferroelectric One Transistor/One Capacitor Memory Cell - p. 424 23. Chapter 10.3: Ferroelectric Tunnel Junction - p. 435 24. Chapter 10.4: Ferroelectric Field Effect Transistor - p. 449 25. Chapter 10.5: Negative Capacitance in HfO2- and ZrO2-Based Ferroelectrics - p. 471 26. Chapter 10.6: Ferroelectric Devices for Logic in Memory - p. 493 27. Chapter 10.7: Ferroelectric Field Effect Transistor for Neuromorphic Applications - p. 513 28. Nomenclature - p. 529 29. Acronyms - p. 535 30. Index - p. 541
