Handbook of Silicon Wafer Cleaning Technology, Third Edition, provides an in-depth discussion of cleaning, etching and surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet and plasma processing are reviewed, including surface and colloidal aspects. This revised edition includes the developments of the last ten years to accommodate a continually involving industry, addressing new technologies and materials, such as germanium and III-V compound semiconductors, and reviewing the various techniques and methods for cleaning and surface conditioning. Chapters include numerous examples of cleaning technique and their results.
The book helps the reader understand the process they are using for their cleaning application and why the selected process works. For example, discussion of the mechanism and physics of contamination, metal, particle and organic includes information on particle removal, metal passivation, hydrogen-terminated silicon and other processes that engineers experience in their working environment. In addition, the handbook assists the reader in understanding analytical methods for evaluating contamination.
The book is arranged in an order that segments the various cleaning techniques, aqueous and dry processing. Sections include theory, chemistry and physics first, then go into detail for the various methods of cleaning, specifically particle removal and metal removal, amongst others.
1. Section I. Introduction and Overview - p. xviii 2. Chapter 1. Overview and Evolution of Silicon Wafer Cleaning Technology - p. 3 3. 1.1. Introduction - p. 4 4. 1.2. Importance of Clean and Conditioned Wafer Surfaces - p. 5 5. 1.3. Overview of Wafer Contamination Aspects - p. 10 6. 1.4. Overview of Wafer Cleaning and Surface Conditioning Technology - p. 14 7. 1.5. Evolution of Wafer Cleaning Science and Technology - p. 36 8. 1.6. Modern Cleaning and Surface Conditioning Science and Technology - p. 61 9. 1.7. Summary and Conclusion - p. 63 10. Chapter 2. Overview of Wafer Contamination and Defectivity - p. 87 11. 2.1. Wafer Contamination - p. 88 12. 2.2. Behavior and Impact of Contamination - p. 101 13. 2.3. Sources of Defects and Contamination - p. 126 14. 2.4. Summary - p. 141 15. Section II. Wet-Chemical Processes - p. 149 16. Chapter 3. Particle Deposition and Adhesion - p. 153 17. Chapter 4. Aqueous Cleaning and Surface Conditioning Processes - p. 185 18. 4.1. Overview of Aqueous Cleaning, Rinsing, and Drying Applications and Techniques - p. 186 19. 4.2. FEOL Cleaning - p. 187 20. 4.3. BEOL Cleaning - p. 192 21. 4.4. Common Chemistries and Their Applications - p. 197 22. 4.5. Process Variables Affecting Cleaning - p. 214 23. 4.6. Rinsing and Drying - p. 221 24. 4.7. Aqueous Cleaning Equipment - p. 228 25. 4.8. Current and Future Challenges - p. 237 26. 4.9. Summary - p. 244 27. Chapter 5. Post-CMP Cleaning - p. 253 28. Section III. Dry Cleaning Processes - p. 301 29. Chapter 6. Gas-Phase Wafer Cleaning Technology - p. 305 30. 6.1. Introduction and Overview - p. 306 31. 6.2. Chemistry and Mechanisms - p. 313 32. 6.3. Removal of Silicon Oxides With HF Vapor - p. 316 33. 6.4. O3 and UV/O3 for Organic Removal, Resist Stripping, and Surface Oxidation - p. 336 34. 6.5. UV/Cl2 for Metallic Contamination Removal - p. 347 35. 6.6. Applications of Gas-Phase Cleaning - p. 352 36. 6.7. Process Equipment - p. 362 37. 6.8. Summary - p. 369 38. Chapter 7. Plasma Stripping, Cleaning, and Surface Conditioning - p. 379 39. 7.1. Introduction to Plasma Stripping and Cleaning - p. 380 40. 7.2. Applications of Plasma Stripping, Cleaning, and Surface Conditioning - p. 385 41. 7.3. Mechanisms of Plasma Stripping, Cleaning, and Surface Conditioning - p. 419 42. 7.4. Plasma Stripping, Cleaning, and Surface Conditioning Equipment - p. 428 43. 7.5. Plasma Diagnostics - p. 440 44. 7.6. Plasma Damage - p. 445 45. 7.7. Conclusions - p. 448 46. Chapter 8. Cryogenic Aerosols and Supercritical Fluid Cleaning and Surface Conditioning - p. 457 47. Section IV. Analytical and Control Aspects - p. 502 48. Chapter 9. Surface Chemical Composition and Morphology - p. 505 49. 9.1. Overview of Surface Composition and Morphology - p. 506 50. 9.2. Silicon Oxide–Terminated Surfaces - p. 506 51. 9.3. Hydrogen-Terminated Silicon Surfaces - p. 518 52. 9.4. Contamination and Stability of Hydrogen-Terminated Surfaces - p. 549 53. 9.5. Stability and Reactivity of Hydrogen-Terminated Silicon Surfaces in Solvents - p. 565 54. 9.6. Summary - p. 569 55. Chapter 10. Metal Surface Chemical Composition and Morphology - p. 579 56. Chapter 11. Monitoring of Chemicals and Water - p. 619 57. Chapter 12. Detection and Measurement of Particulate Contaminants - p. 659 58. Chapter 13. Ultratrace Impurity Analysis of Wafer Surfaces - p. 701 59. Index - p. 743
Handbook of Silicon Wafer Cleaning Technology, Third Edition, provides an in-depth discussion of cleaning, etching and surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet and plasma processing are reviewed, including surface and colloidal aspects. This revised edition includes the developments of the last ten years to accommodate a continually involving industry, addressing new technologies and materials, such as germanium and III-V compound semiconductors, and reviewing the various techniques and methods for cleaning and surface conditioning. Chapters include numerous examples of cleaning technique and their results.
The book helps the reader understand the process they are using for their cleaning application and why the selected process works. For example, discussion of the mechanism and physics of contamination, metal, particle and organic includes information on particle removal, metal passivation, hydrogen-terminated silicon and other processes that engineers experience in their working environment. In addition, the handbook assists the reader in understanding analytical methods for evaluating contamination.
The book is arranged in an order that segments the various cleaning techniques, aqueous and dry processing. Sections include theory, chemistry and physics first, then go into detail for the various methods of cleaning, specifically particle removal and metal removal, amongst others.
1. Section I. Introduction and Overview - p. xviii 2. Chapter 1. Overview and Evolution of Silicon Wafer Cleaning Technology - p. 3 3. 1.1. Introduction - p. 4 4. 1.2. Importance of Clean and Conditioned Wafer Surfaces - p. 5 5. 1.3. Overview of Wafer Contamination Aspects - p. 10 6. 1.4. Overview of Wafer Cleaning and Surface Conditioning Technology - p. 14 7. 1.5. Evolution of Wafer Cleaning Science and Technology - p. 36 8. 1.6. Modern Cleaning and Surface Conditioning Science and Technology - p. 61 9. 1.7. Summary and Conclusion - p. 63 10. Chapter 2. Overview of Wafer Contamination and Defectivity - p. 87 11. 2.1. Wafer Contamination - p. 88 12. 2.2. Behavior and Impact of Contamination - p. 101 13. 2.3. Sources of Defects and Contamination - p. 126 14. 2.4. Summary - p. 141 15. Section II. Wet-Chemical Processes - p. 149 16. Chapter 3. Particle Deposition and Adhesion - p. 153 17. Chapter 4. Aqueous Cleaning and Surface Conditioning Processes - p. 185 18. 4.1. Overview of Aqueous Cleaning, Rinsing, and Drying Applications and Techniques - p. 186 19. 4.2. FEOL Cleaning - p. 187 20. 4.3. BEOL Cleaning - p. 192 21. 4.4. Common Chemistries and Their Applications - p. 197 22. 4.5. Process Variables Affecting Cleaning - p. 214 23. 4.6. Rinsing and Drying - p. 221 24. 4.7. Aqueous Cleaning Equipment - p. 228 25. 4.8. Current and Future Challenges - p. 237 26. 4.9. Summary - p. 244 27. Chapter 5. Post-CMP Cleaning - p. 253 28. Section III. Dry Cleaning Processes - p. 301 29. Chapter 6. Gas-Phase Wafer Cleaning Technology - p. 305 30. 6.1. Introduction and Overview - p. 306 31. 6.2. Chemistry and Mechanisms - p. 313 32. 6.3. Removal of Silicon Oxides With HF Vapor - p. 316 33. 6.4. O3 and UV/O3 for Organic Removal, Resist Stripping, and Surface Oxidation - p. 336 34. 6.5. UV/Cl2 for Metallic Contamination Removal - p. 347 35. 6.6. Applications of Gas-Phase Cleaning - p. 352 36. 6.7. Process Equipment - p. 362 37. 6.8. Summary - p. 369 38. Chapter 7. Plasma Stripping, Cleaning, and Surface Conditioning - p. 379 39. 7.1. Introduction to Plasma Stripping and Cleaning - p. 380 40. 7.2. Applications of Plasma Stripping, Cleaning, and Surface Conditioning - p. 385 41. 7.3. Mechanisms of Plasma Stripping, Cleaning, and Surface Conditioning - p. 419 42. 7.4. Plasma Stripping, Cleaning, and Surface Conditioning Equipment - p. 428 43. 7.5. Plasma Diagnostics - p. 440 44. 7.6. Plasma Damage - p. 445 45. 7.7. Conclusions - p. 448 46. Chapter 8. Cryogenic Aerosols and Supercritical Fluid Cleaning and Surface Conditioning - p. 457 47. Section IV. Analytical and Control Aspects - p. 502 48. Chapter 9. Surface Chemical Composition and Morphology - p. 505 49. 9.1. Overview of Surface Composition and Morphology - p. 506 50. 9.2. Silicon Oxide–Terminated Surfaces - p. 506 51. 9.3. Hydrogen-Terminated Silicon Surfaces - p. 518 52. 9.4. Contamination and Stability of Hydrogen-Terminated Surfaces - p. 549 53. 9.5. Stability and Reactivity of Hydrogen-Terminated Silicon Surfaces in Solvents - p. 565 54. 9.6. Summary - p. 569 55. Chapter 10. Metal Surface Chemical Composition and Morphology - p. 579 56. Chapter 11. Monitoring of Chemicals and Water - p. 619 57. Chapter 12. Detection and Measurement of Particulate Contaminants - p. 659 58. Chapter 13. Ultratrace Impurity Analysis of Wafer Surfaces - p. 701 59. Index - p. 743
