III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. ix 6. Preface - p. ix 7. Part I: AlGaN UV Optoelectronics - p. xiv 8. Chapter One: Materials Challenges of AlGaN-Based UV Optoelectronic Devices - p. xiv 9. Chapter Two: Development of Deep UV LEDs and Current Problems in Material and Device Technology - p. 44 10. Chapter Three: Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes - p. 83 11. Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors - p. 120 12. Chapter Five: Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics - p. 166 13. Part II: InGaN Nanostructures: Epitaxy, Properties, and Emerging Device Applications - p. 199 14. Chapter Six: Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires - p. 199 15. Chapter Seven: Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy - p. 229 16. Chapter Eight: InN Nanowires: Epitaxial Growth, Characterization, and Device Applications - p. 266 17. Chapter Nine: Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System - p. 304 18. Chapter Ten: Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications - p. 340 19. Chapter Eleven: III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) Silicon - p. 384 20. Chapter Twelve: Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Heterointegrated on Silicon - p. 409 21. Index - p. 437 22. Contents of Volumes in this Series - p. 447
III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. ix 6. Preface - p. ix 7. Part I: AlGaN UV Optoelectronics - p. xiv 8. Chapter One: Materials Challenges of AlGaN-Based UV Optoelectronic Devices - p. xiv 9. Chapter Two: Development of Deep UV LEDs and Current Problems in Material and Device Technology - p. 44 10. Chapter Three: Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes - p. 83 11. Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors - p. 120 12. Chapter Five: Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics - p. 166 13. Part II: InGaN Nanostructures: Epitaxy, Properties, and Emerging Device Applications - p. 199 14. Chapter Six: Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires - p. 199 15. Chapter Seven: Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy - p. 229 16. Chapter Eight: InN Nanowires: Epitaxial Growth, Characterization, and Device Applications - p. 266 17. Chapter Nine: Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System - p. 304 18. Chapter Ten: Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications - p. 340 19. Chapter Eleven: III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) Silicon - p. 384 20. Chapter Twelve: Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Heterointegrated on Silicon - p. 409 21. Index - p. 437 22. Contents of Volumes in this Series - p. 447
