Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.
The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.
It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
1. 5.1. Introduction - p. 123 2. 5.2. Requirements for phosphors used in wLEDs - p. 124 3. 5.3. The state-of-the-art phosphors for wLEDs - p. 127 4. 5.4. New advances of future phosphors for wLEDs - p. 133 5. 5.5. Future development of wLEDs phosphors - p. 192 6. 6. Recent development of fabrication technologies of nitride LEDs for performance improvement - p. 209 7. 7. Nanostructured LED - p. 243 8. 8. Nonpolar and semipolar LEDs - p. 273 9. Part Two. Performance of nitride LEDs - p. 295 10. 9. Efficiency droop in GaInN/GaN LEDs - p. 299 11. 10. Photonic crystal nitride LEDs - p. 327 12. 11. Nitride LEDs based on quantum wells and quantum dots - p. 377 13. 11.1. Light emitting diodes - p. 377 14. 11.2. Polarization effects in III-nitride LEDs - p. 387 15. 11.3. Current status of III-nitride LEDs - p. 397 16. 11.4. Modern LED designs and enhancements - p. 404 17. 12. Colour tuneable LEDs and pixelated micro-LED arrays - p. 415 18. 13. Reliability of nitride LEDs - p. 441 19. 14. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs - p. 455 20. Introduction - p. 455 21. 14.1. Modeling the performance-limiting effects in GaN-based LEDs - p. 456 22. 14.2. Degradation of LEDs under electrical and thermal stress - p. 467 23. 14.3. Conclusions - p. 481 24. 15. Chip packaging: Encapsulation of nitride LEDs - p. 491 25. Part Three. Applications of nitride LEDs - p. 528 26. 16. White LEDs for lighting applications - p. 531 27. 17. Ultraviolet LEDs - p. 553 28. 18. Infrared emitters using III-nitride semiconductors - p. 587 29. 18.1. Introduction - p. 587 30. 18.2. High-indium-content alloys for IR emitters - p. 587 31. 18.3. RE-doped GaN emitters - p. 590 32. 18.4. III-nitride materials for ISB optoelectronics - p. 591 33. 18.5. ISB devices - p. 601 34. 18.6. Conclusions - p. 605 35. 19. LEDs for liquid crystal display (LCD) backlighting - p. 619 36. 20. LEDs and automotive lighting applications - p. 647 37. 21. LEDs for large displays - p. 659 38. 21.1. Introduction - p. 659 39. 21.2. LED display types - p. 660 40. 21.3. Display parameters - p. 665 41. 21.4. Technology in detail - p. 682 42. 21.5. Summary - p. 727 43. 22. LEDs for projectors - p. 737 44. Index - p. 761 45. Color Plate - p. 797
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.
The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.
It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
1. 5.1. Introduction - p. 123 2. 5.2. Requirements for phosphors used in wLEDs - p. 124 3. 5.3. The state-of-the-art phosphors for wLEDs - p. 127 4. 5.4. New advances of future phosphors for wLEDs - p. 133 5. 5.5. Future development of wLEDs phosphors - p. 192 6. 6. Recent development of fabrication technologies of nitride LEDs for performance improvement - p. 209 7. 7. Nanostructured LED - p. 243 8. 8. Nonpolar and semipolar LEDs - p. 273 9. Part Two. Performance of nitride LEDs - p. 295 10. 9. Efficiency droop in GaInN/GaN LEDs - p. 299 11. 10. Photonic crystal nitride LEDs - p. 327 12. 11. Nitride LEDs based on quantum wells and quantum dots - p. 377 13. 11.1. Light emitting diodes - p. 377 14. 11.2. Polarization effects in III-nitride LEDs - p. 387 15. 11.3. Current status of III-nitride LEDs - p. 397 16. 11.4. Modern LED designs and enhancements - p. 404 17. 12. Colour tuneable LEDs and pixelated micro-LED arrays - p. 415 18. 13. Reliability of nitride LEDs - p. 441 19. 14. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs - p. 455 20. Introduction - p. 455 21. 14.1. Modeling the performance-limiting effects in GaN-based LEDs - p. 456 22. 14.2. Degradation of LEDs under electrical and thermal stress - p. 467 23. 14.3. Conclusions - p. 481 24. 15. Chip packaging: Encapsulation of nitride LEDs - p. 491 25. Part Three. Applications of nitride LEDs - p. 528 26. 16. White LEDs for lighting applications - p. 531 27. 17. Ultraviolet LEDs - p. 553 28. 18. Infrared emitters using III-nitride semiconductors - p. 587 29. 18.1. Introduction - p. 587 30. 18.2. High-indium-content alloys for IR emitters - p. 587 31. 18.3. RE-doped GaN emitters - p. 590 32. 18.4. III-nitride materials for ISB optoelectronics - p. 591 33. 18.5. ISB devices - p. 601 34. 18.6. Conclusions - p. 605 35. 19. LEDs for liquid crystal display (LCD) backlighting - p. 619 36. 20. LEDs and automotive lighting applications - p. 647 37. 21. LEDs for large displays - p. 659 38. 21.1. Introduction - p. 659 39. 21.2. LED display types - p. 660 40. 21.3. Display parameters - p. 665 41. 21.4. Technology in detail - p. 682 42. 21.5. Summary - p. 727 43. 22. LEDs for projectors - p. 737 44. Index - p. 761 45. Color Plate - p. 797
