Recent Developments in the Field of IR Detectors, Volume 118 in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters, including Type-II superlattice unipolar barrier infrared detectors, Fabrication and characterization of Ga-free T2SL structure for high performance infrared photodetector, Extracting Material and Structural Properties from Conventional Test Data of III-V Superlattice Detectors, Antimony-based Type-II superlattice infrared detectors: Focal Plane Arrays, Near-room temperature InAsSb-based infrared photodetectors, and more.
Other sections cover Interband cascade infrared Photodetectors
and Engineering of Superlattice Based Avalanche Photodiodes.
1. Cover image - p. i 2. Title page - p. ii 3. Table of Contents - p. iii 4. Series Page - p. iii 5. Copyright - p. iv 6. Contributors - p. ix 7. Preface - p. xi 8. Chapter One: Type-II superlattice unipolar barrier infrared detectors - p. 1 9. Chapter Two: Fabrication and characterization of Ga-free T2SL structure for high performance midwave infrared photodetector - p. 65 10. Chapter Three: Extracting material and structural properties from conventional test data of III-V superlattice detectors - p. 97 11. Chapter Four: Type-II superlattice focal plane arrays - p. 119 12. Abstract - p. 119 13. 1 From pixel to array - p. 120 14. 2 FPA fabrication - p. 129 15. 3 FPA characterization - p. 142 16. 4 FPA performance - p. 184 17. 5 Summary and outlook - p. 195 18. References - p. 198 19. Further reading - p. 205 20. Chapter Five: Near-room temperature InAsSb-based infrared photodetectors - p. 207 21. Chapter Six: Interband cascade infrared photodetectors - p. 255 22. Chapter Seven: Engineering of superlattice-based avalanche photodiodes - p. 303 23. Index - p. 339
Recent Developments in the Field of IR Detectors, Volume 118 in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters, including Type-II superlattice unipolar barrier infrared detectors, Fabrication and characterization of Ga-free T2SL structure for high performance infrared photodetector, Extracting Material and Structural Properties from Conventional Test Data of III-V Superlattice Detectors, Antimony-based Type-II superlattice infrared detectors: Focal Plane Arrays, Near-room temperature InAsSb-based infrared photodetectors, and more.
Other sections cover Interband cascade infrared Photodetectors
and Engineering of Superlattice Based Avalanche Photodiodes.
1. Cover image - p. i 2. Title page - p. ii 3. Table of Contents - p. iii 4. Series Page - p. iii 5. Copyright - p. iv 6. Contributors - p. ix 7. Preface - p. xi 8. Chapter One: Type-II superlattice unipolar barrier infrared detectors - p. 1 9. Chapter Two: Fabrication and characterization of Ga-free T2SL structure for high performance midwave infrared photodetector - p. 65 10. Chapter Three: Extracting material and structural properties from conventional test data of III-V superlattice detectors - p. 97 11. Chapter Four: Type-II superlattice focal plane arrays - p. 119 12. Abstract - p. 119 13. 1 From pixel to array - p. 120 14. 2 FPA fabrication - p. 129 15. 3 FPA characterization - p. 142 16. 4 FPA performance - p. 184 17. 5 Summary and outlook - p. 195 18. References - p. 198 19. Further reading - p. 205 20. Chapter Five: Near-room temperature InAsSb-based infrared photodetectors - p. 207 21. Chapter Six: Interband cascade infrared photodetectors - p. 255 22. Chapter Seven: Engineering of superlattice-based avalanche photodiodes - p. 303 23. Index - p. 339
