Semiconductors and Semimetals, Volume 111 highlights new advances in the field, with this new volume presenting interesting chapters on Precision Medicine. Each chapter is written by an international board of authors.
1. 1 Introduction - p. 19 2. 2 Structural aspects and bonding - p. 9 3. 3 Band structure - p. 38 4. 4 Vibrational properties - p. 37 5. 5 Sample preparation aspects - p. 52 6. 6 Magnetic properties - p. 51 7. 7 Transport properties - p. 68 8. 8 Conclusions - p. 123 9. Acknowledgments - p. 126 10. References - p. 126 11. Chapter Three: Roadmap for point defects in GaN - p. 133 12. Chapter Four: Point Defects in GaN - p. 153 13. Index - p. 204
Semiconductors and Semimetals, Volume 111 highlights new advances in the field, with this new volume presenting interesting chapters on Precision Medicine. Each chapter is written by an international board of authors.
1. 1 Introduction - p. 19 2. 2 Structural aspects and bonding - p. 9 3. 3 Band structure - p. 38 4. 4 Vibrational properties - p. 37 5. 5 Sample preparation aspects - p. 52 6. 6 Magnetic properties - p. 51 7. 7 Transport properties - p. 68 8. 8 Conclusions - p. 123 9. Acknowledgments - p. 126 10. References - p. 126 11. Chapter Three: Roadmap for point defects in GaN - p. 133 12. Chapter Four: Point Defects in GaN - p. 153 13. Index - p. 204
