Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
1. Chapter 2.1 Introduction - p. 111 2. Chapter 2.2 HTHP synthetic diamonds - p. 113 3. Chapter 2.3 Heteroepitaxial growth of diamond - p. 134 4. Chapter 2.4 Homoepitaxial growth of single-crystal diamond - p. 164 5. Chapter 2.5 Single-crystal diamond wafer production - p. 180 6. Chapter 2.6 Impurities and dopants in diamond - p. 203 7. Chapter 2.7 Diamond semiconductor device and physics - p. 213 8. Chapter 2.7.1 Schottky barrier diodes - p. 213 9. Chapter 2.7.2 Metal-Semiconductor Field-Effect Transistors - p. 221 10. Chapter 2.7.3 Metal-oxide/diamond interface and MOSFETs - p. 226 11. Chapter 2.7.4 Junction FETs - p. 231 12. Chapter 2.7.5 Solar-blind deep-ultraviolet detectors - p. 240 13. Chapter 3: Progress in semiconductor β-Ga2O3 - p. 261 14. Abstract - p. 263 15. Chapter 3.1 The emerging semiconductor β-Ga2O3 - p. 263 16. Chapter 3.2 Growth of β-Ga2O3 single crystal - p. 308 17. Chapter 3.3 Defects and impurities in β-Ga2O3 - p. 330 18. Chapter 4: Recent progress of boron nitrides - p. 345 19. Chapter 5: Nanostructures based on UWBG materials - p. 419 20. Index - p. 479
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
1. Chapter 2.1 Introduction - p. 111 2. Chapter 2.2 HTHP synthetic diamonds - p. 113 3. Chapter 2.3 Heteroepitaxial growth of diamond - p. 134 4. Chapter 2.4 Homoepitaxial growth of single-crystal diamond - p. 164 5. Chapter 2.5 Single-crystal diamond wafer production - p. 180 6. Chapter 2.6 Impurities and dopants in diamond - p. 203 7. Chapter 2.7 Diamond semiconductor device and physics - p. 213 8. Chapter 2.7.1 Schottky barrier diodes - p. 213 9. Chapter 2.7.2 Metal-Semiconductor Field-Effect Transistors - p. 221 10. Chapter 2.7.3 Metal-oxide/diamond interface and MOSFETs - p. 226 11. Chapter 2.7.4 Junction FETs - p. 231 12. Chapter 2.7.5 Solar-blind deep-ultraviolet detectors - p. 240 13. Chapter 3: Progress in semiconductor β-Ga2O3 - p. 261 14. Abstract - p. 263 15. Chapter 3.1 The emerging semiconductor β-Ga2O3 - p. 263 16. Chapter 3.2 Growth of β-Ga2O3 single crystal - p. 308 17. Chapter 3.3 Defects and impurities in β-Ga2O3 - p. 330 18. Chapter 4: Recent progress of boron nitrides - p. 345 19. Chapter 5: Nanostructures based on UWBG materials - p. 419 20. Index - p. 479
