Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.
As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. List of contributors - p. ix 6. Part One: Future prospects - p. x 7. 1: Future technology trends - p. x 8. Part Two: Fundamentals and materials - p. 53 9. 2: Interconnection technologies - p. 53 10. 3: Substrate - p. 80 11. Part Three: Components - p. 94 12. 4: Magnetic materials - p. 94 13. Part Four: Performance Measurement and Reliability Evaluation - p. 107 14. 5: Technologies of a cooling device for power semiconductor - p. 107 15. 6: Thermal transient testing - p. 126 16. 7: Reliability evaluation - p. 153 17. 8: Computer-aided engineering simulations - p. 197 18. Index - p. 225
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.
As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. List of contributors - p. ix 6. Part One: Future prospects - p. x 7. 1: Future technology trends - p. x 8. Part Two: Fundamentals and materials - p. 53 9. 2: Interconnection technologies - p. 53 10. 3: Substrate - p. 80 11. Part Three: Components - p. 94 12. 4: Magnetic materials - p. 94 13. Part Four: Performance Measurement and Reliability Evaluation - p. 107 14. 5: Technologies of a cooling device for power semiconductor - p. 107 15. 6: Thermal transient testing - p. 126 16. 7: Reliability evaluation - p. 153 17. 8: Computer-aided engineering simulations - p. 197 18. Index - p. 225
