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Advances in Imaging and Electron Physics, Volume 199, the latest release in a series that merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy features extended articles on the physics of electron devices (especially semiconductor devices). Specific topics include discussions on Micro-XRF in scanning electron microscopes, and an interesting take on the variational approach for simulation of equilibrium ion distributions in ion traps regarding Coulomb interaction, amongst others. Users will find a comprehensive resource on the most important aspects of particle optics at high and low energies, microlithography, image science and digital image processing.

In addition, topics of interest, including electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains are presented and discussed.

  • Contains contributions from leading authorities on the subject matter
  • Informs and updates on all the latest developments in the field of imaging and electron physics
  • Provides practitioners interested in microscopy, optics, image processing, mathematical morphology, electromagnetic fields, electron, and ion emission with a valuable resource
  • Features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, and digital image processing

1. 1 Introduction - p. 76 2. 2 Linear CBED COM STEM Imaging Techniques - p. 100 3. 3 STEM Imaging Techniques Using a Symmetric Scalar Detector - p. 111 4. 4 STEM Imaging Using an Antisymmetric Vector Detector: iDPC - p. 139 5. 5 Experimental Results Using iDPC-STEM Imaging - p. 158 6. 6 Summary and Conclusions - p. 167 7. Acknowledgments - p. 170 8. Appendix A Resolution of STEM Imaging - p. 170 9. Appendix B Derivation of the Ideal, Linear COM STEM Vector Image Formation Formula - p. 172 10. Appendix C Derivation of the General, Nonlinear STEM Image Formation Formula - p. 174 11. Appendix D CTFs for Aberration-Free MIDI-STEM - p. 177 12. Appendix E Determination of the Scaling Factors in the Fourier Series in Azimuthal Direction for Wedge-Shaped DPC Detectors - p. 179 13. Appendix F CTFiS and CTFiC for the COM-STEM Detector - p. 181 14. Appendix G List of Abbreviations - p. 182 15. Chapter Four: Quantum Nanooptics in the Electron Microscope - p. 184 16. Chapter Five: Component Identification and Interpretation: A Perspective on Tower of Knowledge - p. 234 17. Abstract - p. 234 18. 1 Introduction - p. 234 19. 2 Component Identification by a Voting Method - p. 238 20. 3 Component Interpretation by ToK - p. 257 21. 4 Conclusions - p. 297 22. Index - p. 303

Descripcion
Descripción

Advances in Imaging and Electron Physics, Volume 199, the latest release in a series that merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy features extended articles on the physics of electron devices (especially semiconductor devices). Specific topics include discussions on Micro-XRF in scanning electron microscopes, and an interesting take on the variational approach for simulation of equilibrium ion distributions in ion traps regarding Coulomb interaction, amongst others. Users will find a comprehensive resource on the most important aspects of particle optics at high and low energies, microlithography, image science and digital image processing.

In addition, topics of interest, including electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains are presented and discussed.

  • Contains contributions from leading authorities on the subject matter
  • Informs and updates on all the latest developments in the field of imaging and electron physics
  • Provides practitioners interested in microscopy, optics, image processing, mathematical morphology, electromagnetic fields, electron, and ion emission with a valuable resource
  • Features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, and digital image processing

1. 1 Introduction - p. 76 2. 2 Linear CBED COM STEM Imaging Techniques - p. 100 3. 3 STEM Imaging Techniques Using a Symmetric Scalar Detector - p. 111 4. 4 STEM Imaging Using an Antisymmetric Vector Detector: iDPC - p. 139 5. 5 Experimental Results Using iDPC-STEM Imaging - p. 158 6. 6 Summary and Conclusions - p. 167 7. Acknowledgments - p. 170 8. Appendix A Resolution of STEM Imaging - p. 170 9. Appendix B Derivation of the Ideal, Linear COM STEM Vector Image Formation Formula - p. 172 10. Appendix C Derivation of the General, Nonlinear STEM Image Formation Formula - p. 174 11. Appendix D CTFs for Aberration-Free MIDI-STEM - p. 177 12. Appendix E Determination of the Scaling Factors in the Fourier Series in Azimuthal Direction for Wedge-Shaped DPC Detectors - p. 179 13. Appendix F CTFiS and CTFiC for the COM-STEM Detector - p. 181 14. Appendix G List of Abbreviations - p. 182 15. Chapter Four: Quantum Nanooptics in the Electron Microscope - p. 184 16. Chapter Five: Component Identification and Interpretation: A Perspective on Tower of Knowledge - p. 234 17. Abstract - p. 234 18. 1 Introduction - p. 234 19. 2 Component Identification by a Voting Method - p. 238 20. 3 Component Interpretation by ToK - p. 257 21. 4 Conclusions - p. 297 22. Index - p. 303

Indice
Autores
Muestra
Ficha Técnica