Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.
This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. xi 6. Part One: Progress in nonvolatile memory research and application - p. xiii 7. 1: OxRAM technology development and performances - p. xiii 8. 2: Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications - p. 33 9. 3: Advanced modeling and characterization techniques for innovative memory devices: The RRAM case - p. 102 10. 4: Mechanism of memristive switching in OxRAM - p. 135 11. 5: Interface effects on memristive devices - p. 170 12. 6: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) - p. 202 13. 7: Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology - p. 235 14. 8: 3D-NAND Flash memory and technology - p. 281 15. 9: Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems - p. 319 16. 10: Selector devices for x-point memory - p. 364 17. Part Two: Emerging opportunities - p. 390 18. 11: Ferroelectric memories - p. 390 19. 12: Advances in nanowire PCM - p. 441 20. 13: Flexible and transparent ReRAM devices for system on panel (SOP) application - p. 518 21. 14: RRAM/memristor for computing - p. 538 22. 15: Emerging memory technologies for neuromorphic hardware - p. 583 23. 16: Neuromorphic computing with resistive switching memory devices - p. 602 24. Index - p. 633
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.
This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. xi 6. Part One: Progress in nonvolatile memory research and application - p. xiii 7. 1: OxRAM technology development and performances - p. xiii 8. 2: Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications - p. 33 9. 3: Advanced modeling and characterization techniques for innovative memory devices: The RRAM case - p. 102 10. 4: Mechanism of memristive switching in OxRAM - p. 135 11. 5: Interface effects on memristive devices - p. 170 12. 6: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) - p. 202 13. 7: Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology - p. 235 14. 8: 3D-NAND Flash memory and technology - p. 281 15. 9: Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems - p. 319 16. 10: Selector devices for x-point memory - p. 364 17. Part Two: Emerging opportunities - p. 390 18. 11: Ferroelectric memories - p. 390 19. 12: Advances in nanowire PCM - p. 441 20. 13: Flexible and transparent ReRAM devices for system on panel (SOP) application - p. 518 21. 14: RRAM/memristor for computing - p. 538 22. 15: Emerging memory technologies for neuromorphic hardware - p. 583 23. 16: Neuromorphic computing with resistive switching memory devices - p. 602 24. Index - p. 633
