Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.
The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.
1. Cover image - p. Cover 2. Title page - p. iii 3. Table of Contents - p. iii 4. Copyright - p. iv 5. List of Contributors - p. xv 6. Preface - p. xxiii 7. Part I: Low-Dimensional Systems: Theory and Experiment - p. xxiv 8. 1. The Theory of Two-Dimensional Electronic Systems - p. 3 9. 2. Two-Dimensional Semimetal in HgTe-Based Quantum Wells - p. 29 10. 3. Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors - p. 49 11. 4. Silicon-Based Nanoheterostructures With Quantum Dots - p. 59 12. 5. Electron Transport: From Nanostructures to Nanoelectromechanical Systems - p. 101 13. 6. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures - p. 131 14. 7. Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems - p. 157 15. Part II: Surface, Interface, Epitaxy - p. 181 16. 8. Atomic Processes on the Silicon Surface - p. 189 17. 9. Atomic Structure of Semiconductor Low-Dimensional Heterosystems - p. 223 18. 10. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions - p. 255 19. 11. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism - p. 279 20. 12. Molecular Beam Epitaxy of CdxHg1−xTe - p. 297 21. 13. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures - p. 325 22. 14. Monte Carlo Simulation of Semiconductor Nanostructure Growth - p. 345 23. Part III: Radiation Effects on Semiconductor Structures - p. 361 24. 15. The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing) - p. 367 25. 16. Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation - p. 383 26. 17. Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer - p. 409 27. Part IV: Electronic Advanced Materials - p. 432 28. 18. Superminiature Radiation Sources Based on Semiconductor Nanostructures - p. 437 29. 19. Three-Dimensional Systems and Nanostructures: Technology, Physics and Applications - p. 463 30. 20. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element - p. 493 31. 21. The Optical Multiplexor Based on Multiple Coupled Waveguides in Silicon-on-Insulator Structures - p. 505 32. Index - p. 521
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.
The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.
1. Cover image - p. Cover 2. Title page - p. iii 3. Table of Contents - p. iii 4. Copyright - p. iv 5. List of Contributors - p. xv 6. Preface - p. xxiii 7. Part I: Low-Dimensional Systems: Theory and Experiment - p. xxiv 8. 1. The Theory of Two-Dimensional Electronic Systems - p. 3 9. 2. Two-Dimensional Semimetal in HgTe-Based Quantum Wells - p. 29 10. 3. Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors - p. 49 11. 4. Silicon-Based Nanoheterostructures With Quantum Dots - p. 59 12. 5. Electron Transport: From Nanostructures to Nanoelectromechanical Systems - p. 101 13. 6. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures - p. 131 14. 7. Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems - p. 157 15. Part II: Surface, Interface, Epitaxy - p. 181 16. 8. Atomic Processes on the Silicon Surface - p. 189 17. 9. Atomic Structure of Semiconductor Low-Dimensional Heterosystems - p. 223 18. 10. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions - p. 255 19. 11. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism - p. 279 20. 12. Molecular Beam Epitaxy of CdxHg1−xTe - p. 297 21. 13. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures - p. 325 22. 14. Monte Carlo Simulation of Semiconductor Nanostructure Growth - p. 345 23. Part III: Radiation Effects on Semiconductor Structures - p. 361 24. 15. The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing) - p. 367 25. 16. Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation - p. 383 26. 17. Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer - p. 409 27. Part IV: Electronic Advanced Materials - p. 432 28. 18. Superminiature Radiation Sources Based on Semiconductor Nanostructures - p. 437 29. 19. Three-Dimensional Systems and Nanostructures: Technology, Physics and Applications - p. 463 30. 20. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element - p. 493 31. 21. The Optical Multiplexor Based on Multiple Coupled Waveguides in Silicon-on-Insulator Structures - p. 505 32. Index - p. 521
