Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Second Edition covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized.
The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behavior; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications.
1. Section One. Introduction - p. 1 2. 1. Fundamentals of ferroelectric and piezoelectric properties - p. 3 3. Section Two. Bulk HfO2/ZrO2 - p. 23 4. 2. Structures, phase equilibria, and properties of HfO2 - p. 25 5. Section Three. Ferroelectricity in doped HfO2: Causes and dependencies - p. 47 6. 3.1. Impact of dopants on the phase formation in HfO2 films - p. 49 7. 3.2. Impact of oxygen vacancies on ferroelectric hafnia - p. 61 8. 3.3. Quenching effect in HfO2-based ferroelectric films - p. 85 9. 3.4. Effect of film thickness on the ferroelectric properties - p. 99 10. 3.5. Mechanical stress effects on ferroelectric phase stability - p. 123 11. 3.6. Advancing fluorite-type ferroelectrics with laminated structures: An overview of bilayers, trilayers, superlattices, and nanolaminates - p. 135 12. 3.7. Interface engineering in Hf1-xZrxO2-based capacitors for ferroelectric devices - p. 151 13. 3.8. Impact of electrodes on the ferroelectric properties - p. 167 14. Section Four. Growth - p. 187 15. 4.1. Dopants in atomic layer deposited HfO2 thin films - p. 189 16. 4.2. Impact of Zr content in atomic layer deposited Hf1−xZrxO2 thin films - p. 213 17. 4.3. Ferroelectric films by physical vapor deposition - p. 239 18. 4.4. Dopants in chemical solution deposited HfO2 films - p. 255 19. 4.5. Epitaxial growth of doped HfO2 ferroelectric materials - p. 273 20. 4.6. Laser molten: Bulk doped HfO2 - p. 287 21. Section Five. Polarization - p. 303 22. 5.1. Ferroelectricity: Phases and phase transitions - p. 305 23. 5.2. Antiferroelectricity - p. 343 24. 5.3. Piezoelectricity of hafnia-based ferroelectrics - p. 355 25. 5.4. Pyroelectricity - p. 371 26. 5.5. Tunability of optical and dielectric properties - p. 397 27. Section Six. Simulation - p. 413 28. 6.1. Thermodynamics of phase stability and ferroelectricity from first principles - p. 415 29. 6.2. Model of nucleation-limited phase transitions - p. 459 30. 6.3. Phonons and phase transitions in hafnia - p. 473 31. 6.4. Molecular dynamics simulations of ferroelectric hafnia - p. 489 32. 6.5. Defects in ferroelectric HfO2 - p. 507 33. 6.6. Modeling of field cycling behavior of ferroelectric Hafnia-based capacitors - p. 531 34. Section Seven. Electrical behavior: Switching, cycling, and retention - p. 543 35. 7.1. Polarization switching in HfO2-based devices - p. 545 36. 7.2. Field cycling behavior of ferroelectric HfO2-based capacitors - p. 573 37. 7.3. Retention behavior of ferroelectric HfO2-based capacitors - p. 587 38. Section Eight. Ferroelectric hafnium oxide-based applications - p. 599 39. 8.1. Ferroelectric one transistor/one capacitor memory cell - p. 601 40. 8.2. Antiferroelectric one transistor/one capacitor memory cell - p. 615 41. 8.3. HfO2/ZrO2-based antiferroelectric and field-induced ferroelectric materials for DRAM applications - p. 625 42. 8.4. Ferroelectric tunnel junction - p. 637 43. 8.5. Ferroelectric field effect transistor - p. 653 44. 8.6. Logic in memory - p. 679 45. 8.7. HfO2 and ZrO2-based thin films for electrical energy storage - p. 699 46. 8.8. Neuromorphic applications - p. 713 47. 8.9. Pyroelectric devices - p. 727 48. 8.10. Nanoscale piezoelectric resonators - p. 739 49. Index - p. 759
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Second Edition covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized.
The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behavior; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications.
1. Section One. Introduction - p. 1 2. 1. Fundamentals of ferroelectric and piezoelectric properties - p. 3 3. Section Two. Bulk HfO2/ZrO2 - p. 23 4. 2. Structures, phase equilibria, and properties of HfO2 - p. 25 5. Section Three. Ferroelectricity in doped HfO2: Causes and dependencies - p. 47 6. 3.1. Impact of dopants on the phase formation in HfO2 films - p. 49 7. 3.2. Impact of oxygen vacancies on ferroelectric hafnia - p. 61 8. 3.3. Quenching effect in HfO2-based ferroelectric films - p. 85 9. 3.4. Effect of film thickness on the ferroelectric properties - p. 99 10. 3.5. Mechanical stress effects on ferroelectric phase stability - p. 123 11. 3.6. Advancing fluorite-type ferroelectrics with laminated structures: An overview of bilayers, trilayers, superlattices, and nanolaminates - p. 135 12. 3.7. Interface engineering in Hf1-xZrxO2-based capacitors for ferroelectric devices - p. 151 13. 3.8. Impact of electrodes on the ferroelectric properties - p. 167 14. Section Four. Growth - p. 187 15. 4.1. Dopants in atomic layer deposited HfO2 thin films - p. 189 16. 4.2. Impact of Zr content in atomic layer deposited Hf1−xZrxO2 thin films - p. 213 17. 4.3. Ferroelectric films by physical vapor deposition - p. 239 18. 4.4. Dopants in chemical solution deposited HfO2 films - p. 255 19. 4.5. Epitaxial growth of doped HfO2 ferroelectric materials - p. 273 20. 4.6. Laser molten: Bulk doped HfO2 - p. 287 21. Section Five. Polarization - p. 303 22. 5.1. Ferroelectricity: Phases and phase transitions - p. 305 23. 5.2. Antiferroelectricity - p. 343 24. 5.3. Piezoelectricity of hafnia-based ferroelectrics - p. 355 25. 5.4. Pyroelectricity - p. 371 26. 5.5. Tunability of optical and dielectric properties - p. 397 27. Section Six. Simulation - p. 413 28. 6.1. Thermodynamics of phase stability and ferroelectricity from first principles - p. 415 29. 6.2. Model of nucleation-limited phase transitions - p. 459 30. 6.3. Phonons and phase transitions in hafnia - p. 473 31. 6.4. Molecular dynamics simulations of ferroelectric hafnia - p. 489 32. 6.5. Defects in ferroelectric HfO2 - p. 507 33. 6.6. Modeling of field cycling behavior of ferroelectric Hafnia-based capacitors - p. 531 34. Section Seven. Electrical behavior: Switching, cycling, and retention - p. 543 35. 7.1. Polarization switching in HfO2-based devices - p. 545 36. 7.2. Field cycling behavior of ferroelectric HfO2-based capacitors - p. 573 37. 7.3. Retention behavior of ferroelectric HfO2-based capacitors - p. 587 38. Section Eight. Ferroelectric hafnium oxide-based applications - p. 599 39. 8.1. Ferroelectric one transistor/one capacitor memory cell - p. 601 40. 8.2. Antiferroelectric one transistor/one capacitor memory cell - p. 615 41. 8.3. HfO2/ZrO2-based antiferroelectric and field-induced ferroelectric materials for DRAM applications - p. 625 42. 8.4. Ferroelectric tunnel junction - p. 637 43. 8.5. Ferroelectric field effect transistor - p. 653 44. 8.6. Logic in memory - p. 679 45. 8.7. HfO2 and ZrO2-based thin films for electrical energy storage - p. 699 46. 8.8. Neuromorphic applications - p. 713 47. 8.9. Pyroelectric devices - p. 727 48. 8.10. Nanoscale piezoelectric resonators - p. 739 49. Index - p. 759
