High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. xi 6. Chapter 1: CMOS and Beyond CMOS: Scaling Challenges - p. xi 7. Chapter 2: Opportunities and Challenges of Multiscale Heterogeneous Material Integration on Si Platforms for Enhanced Functionality and Performance - p. 44 8. Chapter 3: Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices - p. 69 9. Chapter 4: III-N Epitaxy on Si for Power Electronics - p. 114 10. Chapter 5: Impact of Defects on the Performance of High-Mobility Semiconductor Devices - p. 158 11. Chapter 6: SiGe Devices - p. 203 12. Chapter 7: III-V Devices and Technology for CMOS - p. 229 13. Chapter 8: Beyond CMOS: Steep-Slope Devices and Energy Efficient Nanoelectronics - p. 280 14. Chapter 9: Optoelectronic Devices Integrated on Silicon - p. 305 15. Chapter 10: Circuits - p. 338 16. Index - p. 369
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. xi 6. Chapter 1: CMOS and Beyond CMOS: Scaling Challenges - p. xi 7. Chapter 2: Opportunities and Challenges of Multiscale Heterogeneous Material Integration on Si Platforms for Enhanced Functionality and Performance - p. 44 8. Chapter 3: Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices - p. 69 9. Chapter 4: III-N Epitaxy on Si for Power Electronics - p. 114 10. Chapter 5: Impact of Defects on the Performance of High-Mobility Semiconductor Devices - p. 158 11. Chapter 6: SiGe Devices - p. 203 12. Chapter 7: III-V Devices and Technology for CMOS - p. 229 13. Chapter 8: Beyond CMOS: Steep-Slope Devices and Energy Efficient Nanoelectronics - p. 280 14. Chapter 9: Optoelectronic Devices Integrated on Silicon - p. 305 15. Chapter 10: Circuits - p. 338 16. Index - p. 369
