III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. ix 6. Preface - p. xi 7. Chapter One: Electronic properties of III-nitride materials and basics of III-nitride FETs - p. xii 8. Chapter Two: Epitaxial growth of III-nitride electronic devices - p. 40 9. Chapter Three: III-Nitride microwave power transistors - p. 113 10. Chapter Four: III-Nitride millimeter wave transistors - p. 140 11. Chapter Five: III-Nitride lateral transistor power switch - p. 184 12. Chapter Six: III-Nitride vertical devices - p. 218 13. Chapter Seven: Physics-based III-Nitride device modeling - p. 242 14. Chapter Eight: Power electronics applications of III-nitride transistors - p. 306 15. Chapter Nine: N-polar III-nitride transistors - p. 328 16. Chapter Ten: III-Nitride ultra-wide-bandgap electronic devices - p. 395 17. Chapter Eleven: III-Nitride p-channel transistors - p. 416 18. Chapter Twelve: Emerging materials, processing and device concepts: Epitaxial transition metal nitride electronic materials - p. 434 19. Chapter Thirteen: Epitaxial lift-off for III-nitride devices - p. 464 20. Index - p. 515
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.
1. Cover image - p. iv 2. Title page - p. iv 3. Table of Contents - p. iv 4. Copyright - p. iv 5. Contributors - p. ix 6. Preface - p. xi 7. Chapter One: Electronic properties of III-nitride materials and basics of III-nitride FETs - p. xii 8. Chapter Two: Epitaxial growth of III-nitride electronic devices - p. 40 9. Chapter Three: III-Nitride microwave power transistors - p. 113 10. Chapter Four: III-Nitride millimeter wave transistors - p. 140 11. Chapter Five: III-Nitride lateral transistor power switch - p. 184 12. Chapter Six: III-Nitride vertical devices - p. 218 13. Chapter Seven: Physics-based III-Nitride device modeling - p. 242 14. Chapter Eight: Power electronics applications of III-nitride transistors - p. 306 15. Chapter Nine: N-polar III-nitride transistors - p. 328 16. Chapter Ten: III-Nitride ultra-wide-bandgap electronic devices - p. 395 17. Chapter Eleven: III-Nitride p-channel transistors - p. 416 18. Chapter Twelve: Emerging materials, processing and device concepts: Epitaxial transition metal nitride electronic materials - p. 434 19. Chapter Thirteen: Epitaxial lift-off for III-nitride devices - p. 464 20. Index - p. 515
