Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors.
1. Cover image - p. i 2. Title page - p. ii 3. Table of Contents - p. iii 4. Series Page - p. iii 5. Copyright - p. iii 6. Contributors - p. iii 7. Preface - p. iii 8. Chapter One: Epitaxial ScAlN: Transistors through high ScN fraction thin films - p. 1 9. Chapter Two: Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications - p. 21 10. Chapter Three: Structural and ferroelectric properties of Al1−xScxN - p. 71 11. Chapter Four: In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators - p. 101 12. Chapter Five: Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs) - p. 119 13. Chapter Six: Reliability of ferroelectric devices - p. 137 14. Index - p. 164
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors.
1. Cover image - p. i 2. Title page - p. ii 3. Table of Contents - p. iii 4. Series Page - p. iii 5. Copyright - p. iii 6. Contributors - p. iii 7. Preface - p. iii 8. Chapter One: Epitaxial ScAlN: Transistors through high ScN fraction thin films - p. 1 9. Chapter Two: Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications - p. 21 10. Chapter Three: Structural and ferroelectric properties of Al1−xScxN - p. 71 11. Chapter Four: In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators - p. 101 12. Chapter Five: Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs) - p. 119 13. Chapter Six: Reliability of ferroelectric devices - p. 137 14. Index - p. 164
