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Descripción

FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.

With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.

  • Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert’s insight into the specifications of the standard
  • A new edition of the original groundbreaking book on the industry-standard FinFET model—BSIM-CMG
New to This Edition
  • Includes a new chapter providing a comprehensive introduction to GAAFET, including motivations, device concepts, structure, benefits, and the industry standard GAAFET model
  • Covers the most recent developments in the BSIM-CMG model
  • Presents an updated RF modeling of FinFET using the BSIM-CMG model including parameter extraction
  • Includes a new chapter on cryogenic modeling

1. FinFET/GAA Modeling for IC Simulation and Design - p. i 2. Cover - p. i 3. Title Page - p. iii 4. Copyright Page - p. iv 5. Table of Contents - p. iv 6. Author Biographies - p. xi 7. Preface - p. xv 8. Chapter 1 3D thin-body FinFET and GAA: From device to compact model - p. 1 9. Chapter 2 Compact models for analog and RF applications - p. 15 10. Chapter 3 Core model for FinFETs - p. 69 11. Chapter 4 Gate-all-around FETs - p. 95 12. Chapter 5 Channel current and real device effects - p. 113 13. Chapter 6 Leakage currents - p. 141 14. Chapter 7 Charge, capacitance, and nonquasi-static effects - p. 163 15. Chapter 8 Parasitic resistances and capacitances - p. 177 16. Chapter 9 Noise - p. 215 17. Chapter 10 Junction diode I-V and C-V models - p. 225 18. Chapter 11 Benchmark tests for compact models - p. 239 19. Chapter 12 BSIM-CMG model parameter extraction - p. 251 20. Chapter 13 Temperature dependence - p. 263 21. Chapter 14 Cryogenic temperature modeling - p. 279 22. Index - p. 301

Descripcion
Descripción

FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.

With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.

  • Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert’s insight into the specifications of the standard
  • A new edition of the original groundbreaking book on the industry-standard FinFET model—BSIM-CMG
New to This Edition
  • Includes a new chapter providing a comprehensive introduction to GAAFET, including motivations, device concepts, structure, benefits, and the industry standard GAAFET model
  • Covers the most recent developments in the BSIM-CMG model
  • Presents an updated RF modeling of FinFET using the BSIM-CMG model including parameter extraction
  • Includes a new chapter on cryogenic modeling

1. FinFET/GAA Modeling for IC Simulation and Design - p. i 2. Cover - p. i 3. Title Page - p. iii 4. Copyright Page - p. iv 5. Table of Contents - p. iv 6. Author Biographies - p. xi 7. Preface - p. xv 8. Chapter 1 3D thin-body FinFET and GAA: From device to compact model - p. 1 9. Chapter 2 Compact models for analog and RF applications - p. 15 10. Chapter 3 Core model for FinFETs - p. 69 11. Chapter 4 Gate-all-around FETs - p. 95 12. Chapter 5 Channel current and real device effects - p. 113 13. Chapter 6 Leakage currents - p. 141 14. Chapter 7 Charge, capacitance, and nonquasi-static effects - p. 163 15. Chapter 8 Parasitic resistances and capacitances - p. 177 16. Chapter 9 Noise - p. 215 17. Chapter 10 Junction diode I-V and C-V models - p. 225 18. Chapter 11 Benchmark tests for compact models - p. 239 19. Chapter 12 BSIM-CMG model parameter extraction - p. 251 20. Chapter 13 Temperature dependence - p. 263 21. Chapter 14 Cryogenic temperature modeling - p. 279 22. Index - p. 301

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Ficha Técnica