Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored.
1. Cover image - p. i 2. Table of Contents - p. iii 3. Series Page - p. iii 4. Copyright - p. iii 5. Contributors - p. iii 6. Preface - p. xiii 7. Chapter One: Fundamental technologies for gallium oxide transistors - p. 1 8. Chapter Two: Advanced concepts in Ga2O3 power and RF devices - p. 23 9. Chapter Three: β-(AlxGa(1 −x))2O3 epitaxial growth, doping and transport - p. 49 10. Chapter Four: Thermal science and engineering of β-Ga2O3 materials and devices - p. 77 11. Chapter Five: Controlling different phases of gallium oxide for solar-blind photodetector application - p. 114 12. Chapter Six: Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications - p. 153 13. Chapter Seven: High-Al-content heterostructures and devices - p. 191 14. Chapter Eight: AlN nonlinear optics and integrated photonics - p. 223 15. Chapter Nine: Material epitaxy of AlN thin films - p. 283 16. Chapter Ten: Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum - p. 313 17. Chapter Eleven: AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes - p. 345 18. Chapter Twelve: Electrical transport properties of hexagonal boron nitride epilayers - p. 393 19. Index - p. 454
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored.
1. Cover image - p. i 2. Table of Contents - p. iii 3. Series Page - p. iii 4. Copyright - p. iii 5. Contributors - p. iii 6. Preface - p. xiii 7. Chapter One: Fundamental technologies for gallium oxide transistors - p. 1 8. Chapter Two: Advanced concepts in Ga2O3 power and RF devices - p. 23 9. Chapter Three: β-(AlxGa(1 −x))2O3 epitaxial growth, doping and transport - p. 49 10. Chapter Four: Thermal science and engineering of β-Ga2O3 materials and devices - p. 77 11. Chapter Five: Controlling different phases of gallium oxide for solar-blind photodetector application - p. 114 12. Chapter Six: Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications - p. 153 13. Chapter Seven: High-Al-content heterostructures and devices - p. 191 14. Chapter Eight: AlN nonlinear optics and integrated photonics - p. 223 15. Chapter Nine: Material epitaxy of AlN thin films - p. 283 16. Chapter Ten: Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum - p. 313 17. Chapter Eleven: AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes - p. 345 18. Chapter Twelve: Electrical transport properties of hexagonal boron nitride epilayers - p. 393 19. Index - p. 454
